Friday July 29/10:00
Semiconductor Device Simulation--Energy Transport Models
The speakers in this minisymposium will discuss recent developments in semiconductor device simulation using various energy transport models. These include the hydrodynamic (HD) model, the energy transport (ET) model in which the momentum equations do not appear, the simplified HD model in which the energy equation does not appear, and the quantum hydrodynamic (QHD) model. They will present and compare different numerical methods (essentially non-oscillatory finite difference and discontinuous Galerkin finite element). The speakers will also discuss the sensitivity of model assumptions and parameters to simulation results and, using the first order Godunov method, to explore the theoretical properties of the simplified HD model.
Organizer: Chi-Wang Shu
- 10:00: Convergence of the Godunov Scheme for a Simplified One Dimensional Hydrodynamic Model for Semiconductor Devices.
Bo Zhang, Northwestern Unversity
- 10:30: Essentially Non-Oscillatory Method for Hydrodynamic and Other Energy Transport Models.
Joseph W. Jerome, Northwestern University, and Chi-Wang Shu, Organizer
- 11:00: A Finite Element Method for the Quantum Hydrodynamic Model for Semiconductor Devices .
Zhangxin Chen, Texas A&M University, College Station; Bernardo Cockburn, University of Minnesota, Minneapolis; Carl L. Gardner, Duke University; and Joseph W. Jerome, Northwestern University
- 11:30: Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation.
Zhangxin Chen, Texas A&M University, College Station; Bernardo Cockburn, University of Minnesota, Minneapolis; Joseph W. Jerome, Northwestern University; and Chi-Wang Shu, Organizer