Session Code: Y
Minisymposium Title: Microscopic Processes and Non-Equilibrium Phenomena in Epitaxial Growth
Minisymposium Description: Epitaxial growth is a process where material is deposited on top of another one and takes on the crystalline orientation of the substrate. It is of technological importance for a variety of applications including the fabrication of opto-electronic devices, catalysis and food processing. The study of microscopic processes of epitaxy pose mathematical challenges. The purpose of this minisymposium is to bring together experts workingon models and computational tools for a fundamental understanding of non-equilibrium processes in epitaxy. These models and methods are deterministic or stochastic and span several length and time scales, from the atomistic to the continuum
Minisymposium Organizer: Frederic G. Gibou, University of California, Santa Barbara, USA, Dionisios Margetis, University of Maryland, College Park, USA, Christian Ratsch, University of California, Los Angeles, USA
Speakers:
Christian Ratsch, University of California, Los Angeles, USA-Island Dynamics Model for Mound Formation: Effect of a Step-Edge Barrier
James Evans-Atomistic and Continuum Modeling of Island and Step Dynamics for Epitaxial Growth and Relaxation
Maria Emelianenko, George Mason University, USA-Kinetic Models for Crystalline Misorientations During Coarsening in 2D Materials
Frederic G. Gibou, University of California, Santa Barbara, USA-Parallel Octree-Based Discretizations for Diffusion Dominated Free Boundary Problems
Axel Voigt, Technische Universität Dresden, Germany-Epitaxial Growth of Graphene
Oliver Pierre-Louis-Wetting and Dewetting Dynamics of Thin Solid Films
Dionisios Margetis, University of Maryland, College Park, USA-From Atomistic Dynamics to Mesoscale Descriptions of Crystal Growth
Ken Elder, Oakland University, USA-Formation of Moire Patterns in Ultra Thin Heteroepitaxial Films
